Corial 200IL

* Large area ICP reactor operating at 2 MHz for batch etching of up to seven 2” wafers or for uniform etching of 200 mm wafers,
* Vacuum vessel heating to avoid by-product condensation,
* 220 mm diameter cathode with a shuttle for sample loading and unloading. The shuttle is customized according to process and wafer size. Helium Backside cooling maintains shuttle and wafer temperature low and constant during etching,
* Very high conductance pumping system ISO 160 with Alcatel ADP 122P dry pump rated at 95 m3/h and Alcatel ATH 500 M, magnetically levitated turbomolecular pump (500 l/s, Flow Rate: 1000 sccm at 60 mT),
* Gate valve ISO 160 for fast reactor venting and pumping without stopping the turbomolecular pump,
* MKS capacitance gauge 0 - 1 Torr for process pressure control,
* Automatic pressure control with throttle valve,
* CPU process controller (Processor ARM 926 180 MHz, embedded software in 128 Mo Compact Flash , fast Ethernet link 100 MHz, 64 Mo of SDRAM, CAN bus, RS232),
* A set of digital and analogic Input/output module with a ARM7 processor connected to the CPU process controller via CAN bus for driving the physical devices,
* Gas box with 7 MFCs (O2, Ar, CHF3, C2H4, H2, Cl2, SiCl4) - Max: 8 gas lines,
* 300 W RF generator at 13.56 MHz and automatic match box,
* 1 KW - 2 MHz air-cooled solid-state RF generator with 2 MHz automatic impedance matching network,
* Haake chiller (Cooling power extracted at 0°C : 0.3 KW),
* Graphic User Interface through IBM PC operating under Linux and Firefox. It is equipped with Intel Quad-Core processor running at 2 GHz, 1 Gb of RAM and 2 X 143 Gb hard disk storage (RAID-1 mode),
* 19" LCD colour monitor with keyboard and mouse,
* Load-lock with magnetic drive for 7 X 2” wafers or 200 mm wafers,