Corial 300IL

* Very large area ICP reactor (Ø400 mm) operating at 2 MHz for batch etching of up to seven 4” wafers or for uniform etching of 300 mm diameter wafers,
* Vacuum vessel heating to avoid by-product condensation,
* 340 mm diameter cathode with a shuttle for sample loading and unloading. The shuttle is customized according to process and wafer size. Helium Backside cooling maintains shuttle and wafer temperature low and constant during etching,
* Very high conductance pumping system ISO 200 with Alcatel ADP 122P dry pump rated at 95 m3/h and Alcatel ATH 1600 M, magnetically levitated turbomolecular pump (1600 l/s, Flow Rate: 1000 sccm at 20 mT),
* Gate valve ISO 200 for fast reactor venting and pumping without stopping the turbomolecular pump,
* MKS capacitance gauge 0 - 1 Torr for process pressure control,
* Automatic pressure control with throttle valve,
* CPU process controller (Processor ARM 926 180 MHz,  embedded software in 128 Mo Compact Flash , fast Ethernet link 100 MHz, 64 Mo of SDRAM, CAN bus, RS232),
* A set of digital and analogic Input/output module with a ARM7 processor connected to the CPU process controller via CAN bus for driving the physical devices,
* Gas box with 7 MFCs (O2, CHF3, H2, Cl2, BCl3) - Max: 8 gas lines,
* 600 W RF generator at 13.56 MHz and automatic match box,
* 2 KW - 2 MHz air-cooled solid-state RF generator with 2 MHz automatic impedance matching network,
* Haake chiller (Cooling power extracted at -40°C : 0.5 KW),
* Graphic User Interface through IBM PC operating under Linux and Firefox. It is equipped with Intel Quad-Core processor running at 2 GHz, 1 Gb of RAM and 2 X 143 Gb hard disk storage (RAID-1 mode),
* 19" LCD colour monitor with keyboard and mouse,
* Load-lock with vacuum robot for 7 X 4” wafers or 300 mm wafers,
* Remote control through high speed internet with static IP address.