CORIAL System And Application Overview

CORIAL System Key Points

- Wide range of plasma sources, including RIE and High Density Plasmas as Microwave, DECR, ICP, TCP,
- Versatile systems which enable all plasma modes in the same reactor (RIE, HDP and HDP with RF biasing),
- Quick adaptation of substrate size from 2" up to 12",
- Deposition of very high quality films with low stress,
- Efficient plasma cleaning processes for etchers and deposition systems,
- Wide range of process temperature for etching and deposition (-50 to 320°C).

CORIAL Key Applications

- ICP of Sapphire with high throughput for Patterned Sapphire Substrates (PSS),
- Metal etching, including: Nb, W, Ta, Mo, Ti, Al, Cr,
- Fast ICP of GaAs and SiC via-holes,
- Low damage etching of GaN, GaAs, InP, GaP and alloys,
- Etching of II-VI compounds, including: ZnS, CdTe, MCT, CZT,
- Ultra high resolution etching of Silicon (20 nm),
- Deep Silicon Etching (50 µm),
- SiO2, Si3N4, SiC and aSi-H deposition at low (< 150°C) and high temperature (> 300°C),
- Very low temperature deposition (< 50°C)
- Liquid sources available (TEOS, HMDSO),
- Superlattice deposition.