Solutions For MEMS
Si, SiO2, SiC and Sapphire Deep Etching
The fabrication of MEMS requires a wide range of etching processes with the following characteristics:
* Precise control of the etch profile (High Aspect Ratio),
* Fast etch rates when deep etching is needed,
* Excellent etch uniformity (minimum difference of etch rate versus pattern size).
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Process Performance
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High etch rates achieved using the CORIAL 2,000 W Inductively Coupled Plasma source with 600 W RF biasing:
- Silicon > 1,000 nm/min,
- SiO2 > 600 nm/min,
- SiC > 1200 nm/min,
- Sapphire > 300 nm/min.
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PECVD Solutions
The fabrication of MEMS requires a wide range of SiO2 and Si3N4 deposition processes with the following characteristics:
* Excellent deposition uniformity,
* High film quality: breakdown voltage, low BOE etch rates for SiO2. Low KOH and TMAH etch rates for Si3N4,
* Minimum or adjustable stress.
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Process Performance
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High performance achieved using the CORIAL Inductively Coupled Plasma CVD source and the CORIAL PECVD source with pressurized reactor:
- SiO2 deposition rate > 400 nm/min,
- Si3N4 deposition rate > 150 nm/min,
- SiC deposition rate > 200 nm/min,
- Uniformity on 200 mm wafers < ± 3%,
- High breakdown voltage > 10 MV/cm
- Stress control of films from tensile to compressive,-* No pinholes,
- Efficient in situ plasma cleaning with NO corrosion of vacuum vessel, NO memory effect and NO manual cleaning required.
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